High-resolution Electron-beam Induced Current Imaging of the P-n Junction in Crystalline Silicon on Glass (csg) Solar Cells

The p-n junction of crystalline silicon thin film solar cells on glass (CSG material) has been studied in correlation to high-resolution microstructure analysis. Scanning and transmission electron microscopy (SEM/TEM) have been used to study material-related properties like texture, grain structure and layer structure. Complementary information on the p-n junction properties was obtained by high-resolution electron beam induced current (EBIC) imaging. Beside a plan-view EBIC investigation of the surface, a beveled cross sectional preparation has been applied to study the location of the p-n junction in relation to grain structure and thin film topography. The depth of the p-n junction was roughly estimated to less than 150 nm. The crystal and the layer structure of the films have been studied by TEM in greater detail.